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FIZ2012 | Electronics - I | 4+0+0 | ECTS:4 | Year / Semester | Spring Semester | Level of Course | First Cycle | Status | Compulsory | Department | DEPARTMENT of PHYSICS | Prerequisites and co-requisites | None | Mode of Delivery | | Contact Hours | 14 weeks - 4 hours of lectures per week | Lecturer | Prof. Dr. Tayfur KÜÇÜKÖMEROĞLU | Co-Lecturer | Academic staffs on Electronic Department | Language of instruction | Turkish | Professional practise ( internship ) | None | | The aim of the course: | The basic knowledge acquisition to the students on the fundamental components used in electronics. |
Learning Outcomes | CTPO | TOA | Upon successful completion of the course, the students will be able to : | | | LO - 1 : | learn knowledge about electronic apparatus using daily. | 2,4,6,7 | 1, | LO - 2 : | apply their knowledge to electric circuit and electricity and magnetism laboratory | 2,4,6,7 | 1, | LO - 3 : | gain good information about semiconductor metarials and devices. | 2,4,6,7 | 1, | CTPO : Contribution to programme outcomes, TOA :Type of assessment (1: written exam, 2: Oral exam, 3: Homework assignment, 4: Laboratory exercise/exam, 5: Seminar / presentation, 6: Term paper), LO : Learning Outcome | |
Semiconductors: p-type semiconductor, n-type semiconductor, the p-n junction, Diodes: The open-circuited p-n junction, the Volt-Ampere characteristic, the temperature dependence of the V / I caharacteristic, diode resistance, diode capaticance, BJT: The junction transistor, transistor construction, JFET: The junction field-effect transistor, the Volt-Ampere characteristic, |
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Course Syllabus | Week | Subject | Related Notes / Files | Week 1 | p-type semiconductor, n-type semiconductor, the p-n junction | | Week 2 | the current components of a diode, The Volt-Ampere characteristics, the temperature dependence of the V/I charecteristic, application | | Week 3 | Diode resistance, diode capacitance, diode switching times, application | | Week 4 | zener diode, tunnel diode, the load-line concept, linear diode model | | Week 5 | Fotodiode, led, display, fotovoltaic effect | | Week 6 | Clipping circuits, clamping circuits, application | | Week 7 | Rectifiers, other diode circuits | | Week 8 | The junction transistor, the Common-Base(CB), the Common-Emiter(CE), the Common-Collector(CC) configurations. | | Week 9 | Mid-term exam | | Week 10 | on, cutoff, saturation regions of a BJT, application | | Week 11 | Foto transistor, transistors switching times, the operation points of BJT | | Week 12 | Bias stability | | Week 13 | The junction field-effect transistor, the Volt-Ampere characteristic | | Week 14 | MOSFET, the MOSFET types | | Week 15 | MOSFET circuits,CMOS, the operation point of a JFET, application | | Week 16 | End-of-term exam | | |
1 | Millman Jacob, 1985, MICROELECTRONICS Digital and Analog Systems, McGraw-HILL | | |
1 | Demircioğlu Türen, 2000, Electronic Circuits Solved Problems | | 2 | Millman Jacob, 1988, MICROELECTRONICS, McGraw-HILL | | 3 | Schilling Donald L . / Belove Charles, 1989, ELECTRONIC CIRCUITS, McGraw-HILL | | 4 | Boylestad Robert / Nashelsky Louis, 1972, Electronic Devices and Circuit Theory, Prentice-HALL | | |
Method of Assessment | Type of assessment | Week No | Date | Duration (hours) | Weight (%) | Mid-term exam | 9 | 22/11/2021 | 1,5 | 50 | End-of-term exam | 16 | 12/01/2022 | 1,5 | 50 | |
Student Work Load and its Distribution | Type of work | Duration (hours pw) | No of weeks / Number of activity | Hours in total per term | Yüz yüze eğitim | 4 | 14 | 56 | Sınıf dışı çalışma | 0 | 0 | 0 | Laboratuar çalışması | 0 | 0 | 0 | Arasınav için hazırlık | 4 | 6 | 24 | Arasınav | 2 | 1 | 2 | Uygulama | 0 | 0 | 0 | Klinik Uygulama | 0 | 0 | 0 | Ödev | 0 | 0 | 0 | Proje | 0 | 0 | 0 | Kısa sınav | 0 | 0 | 0 | Dönem sonu sınavı için hazırlık | 6 | 6 | 36 | Dönem sonu sınavı | 2 | 1 | 2 | Diğer 1 | 0 | 0 | 0 | Diğer 2 | 0 | 0 | 0 | Total work load | | | 120 |
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