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| FIZ2012 | Electronics - I | 4+0+0 | ECTS:4 | | Year / Semester | Spring Semester | | Level of Course | First Cycle | | Status | Compulsory | | Department | DEPARTMENT of PHYSICS | | Prerequisites and co-requisites | None | | Mode of Delivery | | | Contact Hours | 14 weeks - 4 hours of lectures per week | | Lecturer | Prof. Dr. Tayfur KÜÇÜKÖMEROĞLU | | Co-Lecturer | Academic Staff | | Language of instruction | Turkish | | Professional practise ( internship ) | None | | | | The aim of the course: | | To provide physics students with the ability to relate the working logic of electronic materials with semiconductor technology to physics, and to provide information about the basic components used in electronics. |
| Learning Outcomes | CTPO | TOA | | Upon successful completion of the course, the students will be able to : | | | | LO - 1 : | learn knowledge about electronic apparatus using daily. | 2 - 6 | 1, | | LO - 2 : | apply their knowledge to electric circuit and electricity and magnetism laboratory | 2 - 6 | 1, | | LO - 3 : | gain good information about semiconductor metarials and devices. | 2 - 6 | 1, | | CTPO : Contribution to programme outcomes, TOA :Type of assessment (1: written exam, 2: Oral exam, 3: Homework assignment, 4: Laboratory exercise/exam, 5: Seminar / presentation, 6: Term paper), LO : Learning Outcome | | |
| Semiconductors: p-type semiconductor, n-type semiconductor, the p-n junction, Diodes: The open-circuited p-n junction, the Volt-Ampere characteristic, the temperature dependence of the V / I caharacteristic, diode resistance, diode capaticance, BJT: The junction transistor, transistor construction, JFET: The junction field-effect transistor, the Volt-Ampere characteristic, |
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| Course Syllabus | | Week | Subject | Related Notes / Files | | Week 1 | p-type semiconductor, n-type semiconductor, the p-n junction | | | Week 2 | the current components of a diode, The Volt-Ampere characteristics, the temperature dependence of the V/I charecteristic, application | | | Week 3 | Diode resistance, diode capacitance, diode switching times, application | | | Week 4 | zener diode, tunnel diode, the load-line concept, linear diode model | | | Week 5 | Fotodiode, led, display, fotovoltaic effect | | | Week 6 | Clipping circuits, clamping circuits, application | | | Week 7 | Rectifiers, other diode circuits | | | Week 8 | The junction transistor, the Common-Base(CB), the Common-Emiter(CE), the Common-Collector(CC) configurations. | | | Week 9 | Mid-term exam | | | Week 10 | on, cutoff, saturation regions of a BJT, application | | | Week 11 | Foto transistor, transistors switching times, the operation points of BJT | | | Week 12 | Bias stability | | | Week 13 | The junction field-effect transistor, the Volt-Ampere characteristic | | | Week 14 | MOSFET, the MOSFET types | | | Week 15 | MOSFET circuits,CMOS, the operation point of a JFET, application | | | Week 16 | End-of-term exam | | | |
| 1 | Elektronik Elemanlar ve Devre Teorisi, Robert Boylestad, Louis Nashelsky | | | 2 | Millman Jacob, 1985, MICROELECTRONICS Digital and Analog Systems, McGraw-HILL | | | |
| 1 | Electronik devices and Circuit Theory (Fifth Edition)Robert BoylestadLouis NashelskyPrentice-Hall international., inc. | | | 2 | Demircioğlu Türen, 2000, Electronic Circuits Solved Problems | | | |
| Method of Assessment | | Type of assessment | Week No | Date | Duration (hours) | Weight (%) | | Mid-term exam | 9 | 04/2026 | 1,5 | 50 | | End-of-term exam | 16 | 06/2026 | 1,5 | 50 | | |
| Student Work Load and its Distribution | | Type of work | Duration (hours pw) | No of weeks / Number of activity | Hours in total per term | | Yüz yüze eğitim | 4 | 14 | 56 | | Sınıf dışı çalışma | 2 | 14 | 28 | | Arasınav için hazırlık | 2 | 8 | 16 | | Arasınav | 1 | 1 | 1 | | Dönem sonu sınavı için hazırlık | 2 | 6 | 12 | | Dönem sonu sınavı | 1 | 1 | 1 | | Total work load | | | 114 |
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